(a) large velocity of the minority charge carriers if the doping concentration is small
(b) large velocity of the minority charge carriers if the doping concentration is large
(c) strong electric field in a depletion region if the doping concentration is small
(d) strong electric field in the depletion region if the doping concentration is large
Answer:
(a) large velocity of the minority charge carriers if the doping concentration is small
(d) strong electric field in the depletion region if the doping concentration is large
Explanation:
If the doping concentration is low, the breakdown in a reverse biassed PN junction diode will most likely occur due to the accumulation of the greater charge in the biassed region and the large velocity of the minority charge. This is the main cause the breakdown