The breakdown in a reverse-biased p–n junction diode is more likely to occur due to

Home » The breakdown in a reverse-biased p–n junction diode is more likely to occur due to

CBSE | Class 12 | NCERT Exemplar | Physics | Semiconductor Electronics: Materials, Devices and Simple Circuits

The breakdown in a reverse-biased p–n junction diode is more likely to occur due to

(a) large velocity of the minority charge carriers if the doping concentration is small

(b) large velocity of the minority charge carriers if the doping concentration is large

(c) strong electric field in a depletion region if the doping concentration is small

(d) strong electric field in the depletion region if the doping concentration is large

Answer:

(a) large velocity of the minority charge carriers if the doping concentration is small

(d) strong electric field in the depletion region if the doping concentration is large

Explanation:

If the doping concentration is low, the breakdown in a reverse biassed PN junction diode will most likely occur due to the accumulation of the greater charge in the biassed region and the large velocity of the minority charge. This is the main cause the breakdown