Figure (a) shows A as the NOR gate's two inputs and $Y$ as the output. As a result, the circuit's output is $\overline{\mathrm{A}+\mathrm{A}}$ So, the output will be $Y=\overline{\mathrm{A}}$...
(Hint: $A=0, B=1$ then $A$ and $B$ inputs of second NOR gate will be 0 and hence $Y=1 .$ Similarly, work out the values of $Y$ for other combinations of $A$ and $B .$ Compare with the truth table of...
Solution: (a) The Boolean expression for NAND gate is given as $Y=\overline{A B}$ Let the output of the NAND gate be $Y^{\prime}$. Therefore, Final output of the combination will be...
Hence identify the exact logic operation carried out by this circuit. Solution: From the figure, we know $B$ is the output, $A$ being the input. Hence, the output can be written as: $Y=\overline{A...
(a) (b) Solution: (a) Input for the circuit: $A$ and $B$ Output for the circuit: $Y$ The left part of the circuit functions as a NOR gate, while the right half of the circuit functions as a NOT...
is called the reverse saturation current, 
is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, 
is the Boltzmann constant 
and 
is the absolute temperature. If for a given diode 
and 
, then
to 
?The expression for current in a p-n junction diode, is given as $I=I_{0} \exp \left(\frac{e V}{2 k_{B} T}-1\right)$ Here, $l_{0}=5 \times 10^{-12} \mathrm{~A}$ $\mathrm{T}=300 \mathrm{~K}$...
is called the reverse saturation current, is the voltage across the diode and is positive for forward bias and negative for reverse bias, and I is the current through the diode, is the Boltzmann constant and is the absolute temperature. If for a given diode and , then
V?
?The expression for current in a p-n junction diode, is given as $I=I_{0} \exp \left(\frac{e V}{2 k_{B} T}-1\right)$ Here, $l_{0}=5 \times 10^{-12} \mathrm{~A}$ $\mathrm{T}=300 \mathrm{~K}$...
is 
. Its hole mobility is much smaller than electron mobility and independent of temperature. What is the ratio between conductivity at 
and that at 
? Assume that the temperature dependence of intrinsic carrier concentration 
is given by ![n_{i}=n_{0} \exp \left[-\frac{E_{g}}{2 k_{B} T}\right]](https://www.learnatnoon.com/s/wp-content/ql-cache/quicklatex.com-c58649b4ebd24ebac282a3ea358c77dd_l3.png "Rendered by QuickLaTeX.com")
is constant.Energy gap in an intrinsic semiconductor is given as $E_{g}=1.2 \mathrm{eV}$ The temperature dependence of the intrinsic carrier-concentration is given by the relation, $n_{i}=n_{0} \exp...
is 
This is doped simultaneously with 
atoms per of Arsenic and 
per atoms of Indium. Calculate the number of electrons and holes.Number of silicon atoms is given as $N=5 \times 10^{28}$ atoms $/ \mathrm{m}^{3}$ Number of arsenic atoms is given as $\mathrm{n}_{\mathrm{AS}}=5 \times 10^{22}$ atoms $/ \mathrm{m}^{3}$ Number of...
Can it detect a wavelength of 6000 nm?No, the photodiode is unable to detect wavelengths of 6000 nm due to the following: The energy bandgap of the given photodiode is given as $E_{g}=2.8 \mathrm{eV}$ The wavelength has the value...
The output frequency of a half-wave rectifier is the same as the input frequency; in this case, the input frequency of the half-wave rectifier is 50 Hz. The output frequency of a full-wave...
(c) is the correct option When a forward bias is applied to a p-n junction, the potential barrier is reduced. As the applied voltage is opposed by the potential barrier, so the potential barrier...
region from 
– region because
-region attract them.(c) is the correct option. The charge carriers' natural tendency is to disperse from the greater concentration zone to the lower concentration region. As a result, holes disperse from the p-region...
and 
Which of the following statements is true?
(c) is the correct option. Carbon has the largest energy bandgap among carbon, germanium, and silicon, while germanium has the smallest. The energy band gap can be related as:...
-type semiconductors?Here, (d) is the correct explanation. The majority carriers in a p-type semiconductor are holes, while the minority carriers are electrons. Trivalent atoms such as aluminium in silicon atoms are...
-type silicon, which of the following statement is true:Here, (c) is the correct option. The majority carriers in n-type silicon are electrons, while the minority carriers are holes. Dropping pentavalent elements like phosphorus into silicon atoms...